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MRF1511Nt1 1 rf device data freescale semiconductor rf power field effect transistor n - channel enhancement - mode lateral mosfet designed for broadband commercial and industrial applications at frequen- cies to 175 mhz. the high gain and broadband performance of this device makes it ideal for large - signal, common source amplifier applications in 7.5 volt portable fm equipment. ? specified performance @ 175 mhz, 7.5 volts output power ? 8 watts power gain ? 13 db efficiency ? 70% ? capable of handling 20:1 vswr, @ 9.5 vdc, 175 mhz, 2 db overdrive features ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? n suffix indicates lead - free terminations. rohs compliant. ? in tape and reel. t1 suffix = 1,000 units per 12 mm, 7 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +40 vdc gate - source voltage v gs 20 vdc drain current ? continuous i d 4 adc total device dissipation @ t c = 25 c (1) derate above 25 c p d 62.5 0.5 w w/ c storage temperature range t stg - 65 to +150 c operating junction temperature t j 150 c table 2. thermal characteristics characteristic symbol value (2) unit thermal resistance, junction to case r jc 2 c/w table 3. moisture sensitivity level test methodology rating package peak temperature unit per jesd22 - a113, ipc/jedec j - std - 020 3 260 c 1. calculated based on the formula p d = 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. document number: MRF1511N rev. 8, 6/2009 freescale semiconductor technical data MRF1511Nt1 175 mhz, 8 w, 7.5 v lateral n - channel broadband rf power mosfet case 466 - 03, style 1 pld - 1.5 plastic g d s t j? t c r jc ? freescale semiconductor, inc., 2008 - 2009. all rights reserved.
2 rf device data freescale semiconductor MRF1511Nt1 table 4. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain current (v ds = 35 vdc, v gs = 0) i dss ? ? 1 adc gate - source leakage current (v gs = 10 vdc, v ds = 0) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 7.5 vdc, i d = 170 a) v gs(th) 1 1.6 2.1 vdc drain - source on - voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.4 ? vdc dynamic characteristics input capacitance (v ds = 7.5 vdc, v gs = 0, f = 1 mhz) c iss ? 100 ? pf output capacitance (v ds = 7.5 vdc, v gs = 0, f = 1 mhz) c oss ? 53 ? pf reverse transfer capacitance (v ds = 7.5 vdc, v gs = 0, f = 1 mhz) c rss ? 8 ? pf functional tests (in freescale test fixture) common - source amplifier power gain (v dd = 7.5 vdc, p out = 8 watts, i dq = 150 ma, f = 175 mhz) g ps ? 13 ? db drain efficiency (v dd = 7.5 vdc, p out = 8 watts, i dq = 150 ma, f = 175 mhz) ? 70 ? %
MRF1511Nt1 3 rf device data freescale semiconductor figure 1. 135 - 175 mhz broadband test circuit v dd c6 r4 c7 c5 r3 rf input rf output z2 z3 z6 c1 c3 c14 dut z7 z9 z10 z4 z5 l4 z8 n2 c18 b2 n1 + c11 b1, b2 short ferrite beads, fair rite products (2743021446) c1, c5, c18 120 pf, 100 mil chip capacitors c2, c10, c12 0 to 20 pf, trimmer capacitors c3 33 pf, 100 mil chip capacitor c4 68 pf, 100 mil chip capacitor c6, c15 10 f, 50 v electrolytic capacitors c7, c16 1,200 pf, 100 mil chip capacitors c8, c17 0.1 f, 100 mil chip capacitors c9 150 pf, 100 mil chip capacitor c11 43 pf, 100 mil chip capacitor c13 24 pf, 100 mil chip capacitor c14 300 pf, 100 mil chip capacitor l1, l3 12.5 nh, a04t, coilcraft l2 26 nh, 4 turn, coilcraft l4 55.5 nh, 5 turn, coilcraft n1, n2 type n flange mounts r1 15 , 0805 chip resistor r2 1.0 k , 1/8 w resistor r3 1.0 k , 0805 chip resistor r4 33 k , 1/8 w resistor z1 0.200 x 0.080 microstrip z2 0.755 x 0.080 microstrip z3 0.300 x 0.080 microstrip z4 0.065 x 0.080 microstrip z5, z6 0.260 x 0.223 microstrip z7 0.095 x 0.080 microstrip z8 0.418 x 0.080 microstrip z9 1.057 x 0.080 microstrip z10 0.120 x 0.080 microstrip board glass teflon ? , 31 mils, 2 oz. copper z1 c2 r1 c4 v gg c15 + c8 b1 r2 c16 c17 c9 c10 c13 c12 l3 l2 l1 typical characteristics, 135 - 175 mhz 175 mhz 155 mhz 135 mhz p out , output power (watts) irl, input return loss (db) ?5 ?15 ?20 ?10 2 145 figure 2. output power versus input power p in , input power (watts) 2 figure 3. input return loss versus output power 0.3 p out , output power (watts) 0 8 0.5 0.1 4 0.4 0.7 0.2 0 10 3 0.6 6 v dd = 7.5 v 7 6910 8 175 mhz 155 mhz 135 mhz v dd = 7.5 v ?25
4 rf device data freescale semiconductor MRF1511Nt1 typical characteristics, 135 - 175 mhz 2 p out , output power (watts) 50 0 70 010 eff, drain efficiency (%) 30 60 40 3 1 eff, drain efficiency (%) figure 4. gain versus output power p out , output power (watts) 8 6 14 figure 5. drain efficiency versus output power 2 gain (db) 5 figure 6. output power versus biasing current 12 i dq , biasing current (ma) 4 figure 7. drain efficiency versus biasing current 80 i dq , biasing current (ma) figure 8. output power versus supply voltage 4 v dd , supply voltage (volts) 2 figure 9. drain efficiency versus supply voltage v dd , supply voltage (volts) 30 14 8 4 0 40 60 70 40 400 0 8 14 600 1000 80 5 6 10 10 16 200 50 4 12 p out , output power (watts) 200 1000 400 600 p out , output power (watts) 61416 12 612 816 3 1 60 4 6 10 12 eff, drain efficiency (%) 50 70 47 58 69 20 10 175 mhz 155 mhz 135 mhz v dd = 7.5 v 175 mhz 155 mhz 135 mhz v dd = 7.5 v 710 9 8 6 800 7 8 9 11 175 mhz 155 mhz 135 mhz v dd = 7.5 v p in = 27 dbm 800 175 mhz 155 mhz 135 mhz v dd = 7.5 v p in = 27 dbm 10 175 mhz 155 mhz 135 mhz i dq = 150 ma p in = 27 dbm 10 175 mhz 155 mhz 135 mhz i dq = 150 ma p in = 27 dbm
MRF1511Nt1 5 rf device data freescale semiconductor figure 10. 66 - 88 mhz broadband test circuit v dd c6 r4 c7 c5 r3 rf input rf output z2 z3 z6 c1 c3 c12 dut z7 z9 z10 z4 z5 l4 z8 n2 c16 b2 n1 + c9 z1 c2 r1 c4 v gg c13 + c8 b1 r2 c14 c15 c11 c10 l3 l1 b1, b2 short ferrite beads, fair rite products (2743021446) c1, c12 330 pf, 100 mil chip capacitors c2 43 pf, 100 mil chip capacitor c3, c10 0 to 20 pf, trimmer capacitors c4 24 pf, 100 mil chip capacitor c5, c16 120 pf, 100 mil chip capacitors c6, c13 10 f, 50 v electrolytic capacitors c7, c14 1,200 pf, 100 mil chip capacitors c8, c15 0.1 f, 100 mil chip capacitors c9 380 pf, 100 mil chip capacitor c11 75 pf, 100 mil chip capacitor l1 82 nh, coilcraft l2 55.5 nh, 5 turn, coilcraft l3 39 nh, 6 turn, coilcraft n1, n2 type n flange mounts r1 15 , 0805 chip resistor r2 51 , 1/2 w resistor r3 100 , 0805 chip resistor r4 33 k , 1/8 w resistor z1 0.136 x 0.080 microstrip z2 0.242 x 0.080 microstrip z3 1.032 x 0.080 microstrip z4 0.145 x 0.080 microstrip z5, z6 0.260 x 0.223 microstrip z7 0.134 x 0.080 microstrip z8 0.490 x 0.080 microstrip z9 0.872 x 0.080 microstrip z10 0.206 x 0.080 microstrip board glass teflon ? , 31 mils, 2 oz. copper typical characteristics, 66 - 88 mhz p out , output power (watts) irl, input return loss (db) ?18 ?20 ?10 2 1 0 45 figure 11. output power versus input power p in , input power (watts) 2 figure 12. input return loss versus output power 0.3 p out , output power (watts) 0 6 0.5 0.1 4 0.4 0.7 0.2 0 10 3 0.6 8 66 mhz 77 mhz 88 mhz v dd = 7.5 v 7 6910 8 ?14 ?16 ?12 ?2 ?6 ?8 ?4 66 mhz 77 mhz 88 mhz v dd = 7.5 v
6 rf device data freescale semiconductor MRF1511Nt1 typical characteristics, 66 - 88 mhz 5 p out , output power (watts) 50 0 70 14 eff, drain efficiency (%) 30 60 40 3 2 eff, drain efficiency (%) figure 13. gain versus output power p out , output power (watts) 8 10 16 figure 14. drain efficiency versus output power 2 gain (db) 1 figure 15. output power versus biasing current 12 i dq , biasing current (ma) 4 figure 16. drain efficiency versus biasing current 80 i dq , biasing current (ma) figure 17. output power versus supply voltage 5 v dd , supply voltage (volts) 2 figure 18. drain efficiency versus supply voltage v dd , supply voltage (volts) 9 8 5 0 40 60 60 40 400 0 8 14 600 1000 80 6 8 10 12 18 200 50 4 14 p out , output power (watts) 200 1000 400 600 p out , output power (watts) 6910 7 678 10 35 4 6 10 12 eff, drain efficiency (%) 50 70 30 i dq = 150 ma p in = 25.7 dbm 7 69 810 66 mhz 77 mhz 88 mhz 20 10 10 69 8 7 66 mhz 77 mhz 88 mhz 800 5 11 7 9 66 mhz 77 mhz 88 mhz v dd = 7.5 v p in = 25.7 dbm v dd = 7.5 v v dd = 7.5 v 800 70 66 mhz 77 mhz 88 mhz v dd = 7.5 v p in = 25.7 dbm 66 mhz 77 mhz 88 mhz 66 mhz 77 mhz 88 mhz i dq = 150 ma p in = 25.7 dbm
MRF1511Nt1 7 rf device data freescale semiconductor typical characteristics 210 10 9 t j , junction temperature ( c) this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 10 8 10 7 mttf factor (hours x amps 2 ) 90 110 130 150 170 190 100 120 140 160 180 200 figure 19. mttf factor versus junction temperature
8 rf device data freescale semiconductor MRF1511Nt1 note: z ol * was chosen based on tradeoffs between gain, drain ef ficiency, and device stability. figure 20. series equivalent input and output impedance z o = 10 z in = complex conjugate of source impedance with parallel 15 resistor and 24 pf capacitor in series with gate. (see figure 10). z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %. f mhz z in z ol * 135 20.1 - j0.5 2.53 - j2.61 z in = complex conjugate of source impedance with parallel 15 resistor and 68 pf capacitor in series with gate. (see figure 1). z ol * = complex conjugate of the load impedance at given output power, voltage, frequency, and d > 50 %. v dd = 7.5 v, i dq = 150 ma, p out = 8 w 155 17.0 +j3.6 3.01 - j2.48 175 15.2 +j7.9 2.52 - j3.02 f mhz z in z ol * 66 25.3 - j0.31 3.62 - j0.751 v dd = 7.5 v, i dq = 150 ma, p out = 8 w 77 25.6 +j3.62 3.59 - j0.129 88 26.7 +j6.79 3.37 - j0.173 z ol * z in 135 155 f = 175 mhz 135 155 f = 175 mhz 66 77 z in f = 88 mhz 66 77 f = 88 mhz z ol * z in z ol * input matching network device under test output matching network
MRF1511Nt1 9 rf device data freescale semiconductor table 5. common source scattering parameters (v dd = 7.5 vdc) i dq = 150 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 30 0.88 - 165 18.92 95 0.015 8 0.84 - 169 50 0.88 - 171 11.47 91 0.016 -5 0.84 - 173 100 0.87 - 175 5.66 85 0.016 -7 0.84 - 176 150 0.87 - 176 3.75 82 0.015 -5 0.85 - 176 200 0.87 - 177 2.78 78 0.014 -6 0.84 - 176 250 0.87 - 177 2.16 75 0.014 -10 0.85 - 176 300 0.88 - 177 1.77 72 0.012 -17 0.86 - 176 350 0.88 - 177 1.49 69 0.013 -11 0.86 - 176 400 0.88 - 177 1.26 66 0.013 -17 0.87 - 175 450 0.88 - 177 1.08 64 0.011 -20 0.87 - 175 500 0.89 - 176 0.96 63 0.012 -20 0.88 - 175 i dq = 800 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 30 0.89 - 166 18.89 95 0.014 10 0.85 - 170 50 0.88 - 172 11.44 91 0.015 8 0.84 - 174 100 0.87 - 175 5.65 86 0.016 -2 0.85 - 176 150 0.87 - 177 3.74 82 0.014 -8 0.84 - 177 200 0.87 - 177 2.78 78 0.013 -18 0.85 - 177 250 0.88 - 177 2.16 75 0.012 -11 0.85 - 176 300 0.88 - 177 1.77 73 0.015 -15 0.86 - 176 350 0.88 - 177 1.50 70 0.009 -7 0.87 - 176 400 0.88 - 177 1.26 67 0.012 -3 0.87 - 176 450 0.88 - 177 1.09 65 0.012 -18 0.87 - 175 500 0.89 - 177 0.97 64 0.009 -10 0.88 - 175 i dq = 1.5 a f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 30 0.90 - 168 17.89 95 0.013 2 0.86 - 172 50 0.89 - 173 10.76 91 0.013 3 0.86 - 175 100 0.88 - 176 5.32 86 0.014 -19 0.86 - 177 150 0.88 - 177 3.53 83 0.013 -6 0.86 - 177 200 0.88 - 177 2.63 80 0.011 -4 0.86 - 177 250 0.88 - 178 2.05 77 0.012 -14 0.86 - 177 300 0.88 - 177 1.69 75 0.013 -2 0.87 - 177 350 0.89 - 177 1.43 72 0.010 -9 0.87 - 176 400 0.89 - 177 1.22 70 0.014 -3 0.88 - 176 450 0.89 - 177 1.06 68 0.011 -8 0.88 - 176 500 0.89 - 177 0.94 67 0.011 -15 0.88 - 176
10 rf device data freescale semiconductor MRF1511Nt1 applications information design considerations this device is a common - source, rf power, n - channel enhancement mode, lateral m etal - o xide s emiconductor f ield - e ffect t ransistor (mosfet). freescale application note an211a, ?fets in theory and practice?, is suggested reading for those not familiar with the construction and char- acteristics of fets. this surface mount packaged device was designed pri- marily for vhf and uhf portable power amplifier applica- tions. manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. however, care should be taken in the design process to insure proper heat sinking of the device. the major advantages of lateral rf power mosfets in- clude high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mis- matched loads without suffering damage. mosfet capacitances the physical structure of a mosfet results in capacitors between all three terminals. the metal oxide gate structure determines the capacitors from gate - to - drain (c gd ), and gate - to - source (c gs ). the pn junction formed during fab- rication of the rf mosfet results in a junction capacitance from drain - to - source (c ds ). these capacitances are charac- terized as input (c iss ), output (c oss ) and reverse transfer (c rss ) capacitances on data sheets. the relationships be- tween the inter - terminal capacitances and those given on data sheets are shown below. the c iss can be specified in two ways: 1. drain shorted to source and positive voltage at the gate. 2. positive voltage of the drain in respect to source and zero volts at the gate. in the latter case, the numbers are lower. however, neither method represents the actual operating conditions in rf ap- plications. drain c ds source gate c gd c gs c iss = c gd + c gs c oss = c gd + c ds c rss = c gd drain characteristics one critical figure of merit for a fet is its static resistance in the full - on condition. this on - resistance, r ds(on) , occurs in the linear region of the output characteristic and is speci- fied at a specific gate - source voltage and drain current. the drain - source voltage under these conditions is termed v ds(on) . for mosfets, v ds(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. bv dss values for this device are higher than normally re- quired for typical applications. measurement of bv dss is not recommended and may result in possible damage to the de- vice. gate characteristics the gate of the rf mosfet is a polysilicon material, and is electrically isolated from the source by a layer of oxide. the dc input resistance is very high - on the order of 10 9 ? resulting in a leakage current of a few nanoamperes. gate control is achieved by applying a positive voltage to the gate greater than the gate - to - source threshold voltage, v gs(th) . gate voltage rating ? never exceed the gate voltage rating. exceeding the rated v gs can result in permanent damage to the oxide layer in the gate region. gate termination ? the gates of these devices are es- sentially capacitors. circuits that leave the gate open - cir- cuited or floating should be avoided. these conditions can result in turn - on of the devices due to voltage build - up on the input capacitor due to leakage currents or pickup. gate protection ? these devices do not have an internal monolithic zener diode from gate - to - source. if gate protec- tion is required, an external zener diode is recommended. using a resistor to keep the gate - to - source impedance low also helps dampen transients and serves another important function. voltage transients on the drain can be coupled to the gate through the parasitic gate - drain capacitance. if the gate - to - source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate - threshold voltage and turn the device on. dc bias since this device is an enhancement mode fet, drain cur- rent flows only when the gate is at a higher potential than the source. rf power fets operate optimally with a quiescent drain current (i dq ), whose value is application dependent. this device was characterized at i dq = 150 ma, which is the suggested value of bias current for typical applications. for special applications such as linear amplification, i dq may have to be selected to optimize the critical parameters. the gate is a dc open circuit and draws no current. there- fore, the gate bias circuit may generally be just a simple re- sistive divider network. some special applications may require a more elaborate bias system. gain control power output of this device may be controlled to some de- gree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, alc/agc and modulation systems. this characteristic is very dependent on frequency and load line.
MRF1511Nt1 11 rf device data freescale semiconductor mounting the specified maximum thermal resistance of 2 c/w as- sumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an ap- propriate heat sink. as with all rf power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. refer to freescale application note an4005/d, ?thermal management and mounting meth- od for the pld - 1.5 rf power surface mount package,? and engineering bulletin eb209/d, ?mounting method for rf power leadless surface mount transistor? for additional in- formation. amplifier design impedance matching networks similar to those used with bipolar transistors are suitable for this device. for examples see freescale application note an721, ?impedance matching networks applied to rf power transistors.? large - signal impedances are provided, and will yield a good first pass approximation. since rf power mosfets are triode devices, they are not unilateral. this coupled with the very high gain of this device yields a device capable of self oscillation. stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. the rf test fix- ture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher effi- ciency, lower gain, and more stable operating region. two - port stability analysis with this device?s s - parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. see free- scale application note an215a, ?rf small - signal design using two - port parameters? for a discussion of two port network theory and stability.
12 rf device data freescale semiconductor MRF1511Nt1 package dimensions 0.115 2.92 0.020 0.51 0.115 2.92 mm inches 0.095 2.41 0.146 3.71 solder footprint case 466 - 03 issue d notes: 1. interpret dimensions and tolerances per asme y14.5m, 1984. 2. controlling dimension: inch 3. resin bleed/flash allowable in zone v, w, and x. dim min max min max millimeters inches a 0.255 0.265 6.48 6.73 b 0.225 0.235 5.72 5.97 c 0.065 0.072 1.65 1.83 d 0.130 0.150 3.30 3.81 e 0.021 0.026 0.53 0.66 f 0.026 0.044 0.66 1.12 g 0.050 0.070 1.27 1.78 h 0.045 0.063 1.14 1.60 k 0.273 0.285 6.93 7.24 l 0.245 0.255 6.22 6.48 n 0.230 0.240 5.84 6.10 p 0.000 0.008 0.00 0.20 q 0.055 0.063 1.40 1.60 r 0.200 0.210 5.08 5.33 s 0.006 0.012 0.15 0.31 u 0.006 0.012 0.15 0.31 zone v 0.000 0.021 0.00 0.53 zone w 0.000 0.010 0.00 0.25 zone x 0.000 0.010 0.00 0.25 style 1: pin 1. drain 2. gate 3. source 4. source j 0.160 0.180 4.06 4.57 a b d f l r 3 4 2 1 k n zone v zone w zone x g s h u 10 draft p c e 0.35 (0.89) x 45 5 yy q view y - y 4 2 1 3 pld - 1.5 plastic
MRF1511Nt1 13 rf device data freescale semiconductor product documentation, tools and software refer to the following documents to aid your design process. application notes ? an211a: field effect transistors in theory and practice ? an215a: rf small - signal design using two - port parameters ? an721: impedance matching networks applied to rf power transistors ? an4005: thermal management and mounting method for the pld 1.5 rf power surface mount package engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator for software and tools, do a part number search at http://www.freescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 7 june 2008 ? corrected specified performance values for power gain and efficiency on p. 1 to match typical performance values in the functional test table on p. 2 ? added product documentation and revision history, p. 13 8 june 2009 ? modified data sheet to reflect msl rating change from 1 to 3 as a result of the standardization of packing process as described in product and process change notification number, pcn13516, p. 1 ? added electromigration mttf calculator avail ability to product docu mentation, tools and software, p. 13
14 rf device data freescale semiconductor MRF1511Nt1 how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 fax: +1 - 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2008 - 2009. all rights reserved. document number: MRF1511N rev. 8, 6/2009 rohs- compliant and/or pb - free versions of freescale products have the functionality and electrical characteristics of their non - rohs- compliant and/or non - pb - free counterparts. for further information, see http://www.freescale.com or contact your freescale sales representative. for information on freescale?s environmental products pr ogram, go to http: //www .freescale.com/epp.

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